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RJP020N06
Transistors
2.5V Drive Nch MOS FET
RJP020N06
Structure
Silicon N-channel MOS FET
External dimensions (Unit : mm)
MPT3
Features
1) Low On-resistance.
4.5
1.6
1.5
2) Low voltage drive (2.5V drive).
(1)
(2)
(3)
0.4
0.4
1.5
0.5
1.5
0.4
Applications
Switching
Packaging specifications
Package
Taping
(1)Gate
(2)Dr ain
(3)Source
Inner circuit
3.0
Abbreviated symbol : LS
DRAIN
Type
Code
Basic ordering unit (pieces)
T100
1000
RJP020N06
GATE
? 2
? 1
SOURCE
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Absolute maximum ratings (Ta=25 ° C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
60
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
P D
Tch
Tstg
± 2.0
± 8.0
2.0
8.0
500
2 ? 2
150
? 55 to + 150
A
A
A
A
mW
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a 40 40 0.7mm ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
Limits
250
62.5 ?
Unit
° C/W
° C/W
? When mounted on a 40 40 0.7mm ceramic board
1/2
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